APA (7th ed.) Citation

Jongdae Kim. A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. IEEE Transactions on electron devices.

Chicago Style (17th ed.) Citation

Jongdae Kim. "A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-align Technique and Hydrogen Annealing." IEEE Transactions on Electron Devices .

MLA (9th ed.) Citation

Jongdae Kim. "A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-align Technique and Hydrogen Annealing." IEEE Transactions on Electron Devices, .