Jongdae Kim. A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. IEEE Transactions on electron devices.
Citação norma ChicagoJongdae Kim. "A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-align Technique and Hydrogen Annealing." IEEE Transactions on Electron Devices .
Citação norma MLAJongdae Kim. "A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-align Technique and Hydrogen Annealing." IEEE Transactions on Electron Devices, .
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