Cita APA (7a ed.)

Jongdae Kim. A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. IEEE Transactions on electron devices.

Cita Chicago Style (17a ed.)

Jongdae Kim. "A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-align Technique and Hydrogen Annealing." IEEE Transactions on Electron Devices .

Cita MLA (9a ed.)

Jongdae Kim. "A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-align Technique and Hydrogen Annealing." IEEE Transactions on Electron Devices, .