Hot-hole-induced dielectric breakdown in LDMOS transistors.
A novel failure mechanism in an n-channel lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor biased in the saturation mode is investigated. A correlation between time-to-breakdown and hot hole gate current is established and the static safe operating area (SOA), limited by hot-hole...
| Τόπος έκδοσης: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Κύριος συγγραφέας: | |
| Μορφή: | Άρθρο |
| Γλώσσα: | English |
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