Hot-hole-induced dielectric breakdown in LDMOS transistors.

Hot-hole-induced dielectric breakdown in LDMOS transistors.

A novel failure mechanism in an n-channel lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor biased in the saturation mode is investigated. A correlation between time-to-breakdown and hot hole gate current is established and the static safe operating area (SOA), limited by hot-hole...

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Detalhes bibliográficos
Publicado no:IEEE Transactions on electron devices 50, 2 (2003).
Autor principal: Labate, L.
Formato: Artigo
Idioma:English
Assuntos:
HV devices.
Dynamic mode.
Electrical parameters.
Failure mechanism.
Gate oxide.
High-voltage devices.
Hot hole gate current.
Hot hole injection.
Hot-hole-induced dielectric breakdown.
Lateral double-diffused MOS transistor.
N-channel LDMOS transistor.
Periodic mode.
Prebreakdown degradation.
Saturation mode.
Static SOA.
Static safe operating area.
Time-to-breakdown.