Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications.

Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications.

This work develops a novel hydrogenated amorphous silicon (a-Si:H) p-i-n photodiode-based X-ray detector aimed at medical image applications. The new detector consists of an a-Si:H p-i-n photodiode and a stacked dielectric layer, deposited on the p-layer (n-i-p-SiNx) or the n-layer (p-i-n-SiNx) of t...

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প্রকাশিত:IEEE Transactions on electron devices 50, 2 (2003).
প্রধান লেখক: Sen-Shyong Fann
বিন্যাস: প্রবন্ধ
ভাষা:English
বিষয়গুলি:
2D detector array.
PIN photodiode-based X-ray detector.
Si:H.
X-ray image detectors.
a-Si:H p-i-n photodiode.
Charge storage element.
Data retention capacity.
Data retention improvements.
Dynamic range.
Linearity.
Medical image applications.
Photodiode junction capacitance.
Photon-charge transfer efficiency.
Photon-converted charges.
Reverse-biased p-i-n photodiode.
Stacked dielectric layer.
Two-dimensional detection array.