Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.
The electrical, material, and reliability characteristics of zirconium oxynitride (Zr-oxynitride) gate dielectrics were evaluated. The nitrogen (∼1.7%) in Zr-oxynitride was primarily located at the Zr-oxynitride/Si interface and helped to preserve the composition of the nitrogen-doped Zr-silicate in...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 2 (2003). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |