Nieh, R. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. IEEE Transactions on electron devices.
Style de citation Chicago (17e éd.)Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .
Style de citation MLA (9e éd.)Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .
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