Nieh, R. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationNieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .
MLA (9th ed.) CitationNieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .
Warning: These citations may not always be 100% accurate.