Nieh, R. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. IEEE Transactions on electron devices.
Citace podle Chicago (17th ed.)Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .
Citace podle MLA (9th ed.)Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .
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