Cita APA (7th ed.)

Nieh, R. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. IEEE Transactions on electron devices.

Cita Chicago (17th ed.)

Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .

Cita MLA (9th ed.)

Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .

Atenció: Aquestes cites poden no estar 100% correctes.