APA (7 ম সংস্করণ) উদ্ধৃতি

Nieh, R. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. IEEE Transactions on electron devices.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .

M.L.A (9 ম সংস্করণ) উদ্ধৃতি

Nieh, R.E. "Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs with High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .