Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

An extensive characterization of the on-state breakdown characteristics of GaAs based MESFETs and HEMTs has been carried out by means of DC and pulsed measurements and of circuit simulations. A computer-controlled, three-terminal Transmission Line Pulse (TLP) system with 50-100 ns pulse width and su...

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Xuất bản năm:IEEE Transactions on electron devices 50, 2 (2003).
Tác giả chính: Meneghesso, G.
Định dạng: Bài viết
Ngôn ngữ:English
Những chủ đề:
50 to 100 ns.
DC measurements.
GaAs.
GaAs HEMTs.
GaAs MESFETs.
SPICE simulations.
Automated pulsed measurements.
Circuit simulations.
Computer-controlled system.
Device I-V characteristics.
Drain currents.
Equivalent circuit model.
Gate current density.
Gate currents.
Nondestructive measurements.
On-state breakdown characteristics.
Parasitic bipolar effect.
Strong avalanche conditions.
Transmission line pulse system.
Weak avalanche conditions.