Azala

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.

An extensive characterization of the on-state breakdown characteristics of GaAs based MESFETs and HEMTs has been carried out by means of DC and pulsed measurements and of circuit simulations. A computer-controlled, three-terminal Transmission Line Pulse (TLP) system with 50-100 ns pulse width and su...

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Xehetasun bibliografikoak
Argitaratua izan da:IEEE Transactions on electron devices 50, 2 (2003).
Egile nagusia: Meneghesso, G.
Formatua: Artikulua
Hizkuntza:ingelesa
Gaiak:
50 to 100 ns.
DC measurements.
GaAs.
GaAs HEMTs.
GaAs MESFETs.
SPICE simulations.
Automated pulsed measurements.
Circuit simulations.
Computer-controlled system.
Device I-V characteristics.
Drain currents.
Equivalent circuit model.
Gate current density.
Gate currents.
Nondestructive measurements.
On-state breakdown characteristics.
Parasitic bipolar effect.
Strong avalanche conditions.
Transmission line pulse system.
Weak avalanche conditions.