Meneghesso, G. Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationMeneghesso, G. "Pulsed Measurements and Circuit Modeling of Weak and Strong Avalanche Effects in GaAs MESFETs and HEMTs." IEEE Transactions on Electron Devices .
MLA引文Meneghesso, G. "Pulsed Measurements and Circuit Modeling of Weak and Strong Avalanche Effects in GaAs MESFETs and HEMTs." IEEE Transactions on Electron Devices, .
警告：這些引文格式不一定是100％准確.