Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor (HEMT) that includes a nonlinear model of the strain polarization fields produced at the heterointerface. Recent experimental work has indicated that the macroscopic polarization in III-nitride alloys is a...
| 发表在: | IEEE Transactions on electron devices 50, 2 (2003). |
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| 格式: | 文件 |
| 语言: | English |
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