Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.

We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor (HEMT) that includes a nonlinear model of the strain polarization fields produced at the heterointerface. Recent experimental work has indicated that the macroscopic polarization in III-nitride alloys is a...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Tsung-Hsing Yu
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
GaN-AlGaN.
GaN-AlGaN HEMT.
GaN-AlGaN heterointerface.
MODFETs.
Current-voltage characteristics.
Cutoff frequency.
Material composition.
Nonlinear model.
Nonlinear polarization model.
Quasi-2D model.
Quasi-two-dimensional model.
Sheet carrier density.
Strain polarization fields.
Theoretical model.
Transconductance.