APA引文

Tsung-Hsing Yu. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. IEEE Transactions on electron devices.

Chicago Style (17th ed.) Citation

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices .

MLA引文

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices, .

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