Цитирование APA (7-е изд.)

Tsung-Hsing Yu. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. IEEE Transactions on electron devices.

Цитирование в стиле Чикаго (17-е изд.)

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices .

Цитирование MLA (9-е изд.)

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices, .

Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.