Tsung-Hsing Yu. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. IEEE Transactions on electron devices.
Citazione stile Chigago Style (17a edizione)Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices .
Citatione MLA (9a ed.)Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices, .
Attenzione: Queste citazioni potrebbero non essere precise al 100%.