Cita APA (7a ed.)

Tsung-Hsing Yu. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. IEEE Transactions on electron devices.

Cita Chicago Style (17a ed.)

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices .

Cita MLA (9a ed.)

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices, .