Tsung-Hsing Yu. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. IEEE Transactions on electron devices.
Citace podle Chicago (17th ed.)Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices .
Citace podle MLA (9th ed.)Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices, .
Upozornění: Tyto citace jsou generovány automaticky. Nemusí být zcela správně podle citačních pravidel..