APA (7 ম সংস্করণ) উদ্ধৃতি

Tsung-Hsing Yu. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. IEEE Transactions on electron devices.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices .

M.L.A (9 ম সংস্করণ) উদ্ধৃতি

Tsung-Hsing Yu. "Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization Model." IEEE Transactions on Electron Devices, .