Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.

Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.

We eliminated kink phenomena and Ids hysteresis in a double-doped InP-based HEMT without degrading its frequency performance by fabricating direct ohmic contacts in the InGaAs channel. A direct ohmic structure lets us control current paths in the device and relax the electric field at the recess edg...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Sawada, K.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
I-V characteristic hysteresis.
Ids hysteresis.
InGaAs.
InGaAs channel.
InP.
InP-based HEMT.
MODFET.
Ni-AuGe-Au.
Direct ohmic structure.
Double-doped HEMT.
Drain current hysteresis elimination.
High electric field region.
Hole current reduction.
Hole trap mechanism.
Impact ionization suppression.
Kink phenomena elimination.