Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
We eliminated kink phenomena and Ids hysteresis in a double-doped InP-based HEMT without degrading its frequency performance by fabricating direct ohmic contacts in the InGaAs channel. A direct ohmic structure lets us control current paths in the device and relax the electric field at the recess edg...
| में प्रकाशित: | IEEE Transactions on electron devices 50, 2 (2003). |
|---|---|
| मुख्य लेखक: | |
| स्वरूप: | लेख |
| भाषा: | English |
| विषय: |