Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
We eliminated kink phenomena and Ids hysteresis in a double-doped InP-based HEMT without degrading its frequency performance by fabricating direct ohmic contacts in the InGaAs channel. A direct ohmic structure lets us control current paths in the device and relax the electric field at the recess edg...
| Τόπος έκδοσης: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Κύριος συγγραφέας: | |
| Μορφή: | Άρθρο |
| Γλώσσα: | English |
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