Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.

We eliminated kink phenomena and Ids hysteresis in a double-doped InP-based HEMT without degrading its frequency performance by fabricating direct ohmic contacts in the InGaAs channel. A direct ohmic structure lets us control current paths in the device and relax the electric field at the recess edg...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on electron devices 50, 2 (2003).
1. Verfasser:	Sawada, K.
Format:	Artikel
Sprache:	English
Schlagworte:	I-V characteristic hysteresis. Ids hysteresis. InGaAs. InGaAs channel. InP. InP-based HEMT. MODFET. Ni-AuGe-Au. Direct ohmic structure. Double-doped HEMT. Drain current hysteresis elimination. High electric field region. Hole current reduction. Hole trap mechanism. Impact ionization suppression. Kink phenomena elimination.