Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.

Heterojunction bipolar transistors (HBTs) having an Al0.45Ga0.55As-GaAs digital-graded superlattice (DGSL) emitter along with an InGaP sub-emitter are reported. The band diagram of the DGSL emitter is analyzed by using a transfer matrix method and the theoretical result is consistent with the experi...

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Vydáno v:	IEEE Transactions on electron devices 50, 2 (2003).
Hlavní autor:	Ming-Kwen Tsai
Médium:	Článek
Jazyk:	English
Témata:	0.87 V. 50 mV. InGaP. InGaP sub-emitter. InGaP-capped HBTs. Band diagram analysis. Digitally-graded superlattice emitter. Emitter-base junction. High Al-fraction passivation layer. Offset voltage. Oxidation quality. Passivated HBTs. Potential spike. Transfer matrix method. Turn-on voltage reduction. Wet oxidation. Al0.45Ga0.55As-GaAs.