Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.
Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 2 (2003). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |