Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.

Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.

Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Mitani, Y.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
2D analysis.
GaAs.
GaAs MESFETs.
Breakdown characteristics.
Breakdown voltage.
Gate-lag phenomena.
Impact ionization.
Narrowly recessed gate FETs.
Physical model.
Potential profiles.
Recess structures.
Surface states.
Two-dimensional analysis.