Cita APA (7a ed.)

Mitani, Y. Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. IEEE Transactions on electron devices.

Cita Chicago Style (17a ed.)

Mitani, Y. "Analysis of Surface-state and Impact-ionization Effects on Breakdown Characteristics and Gate-lag Phenomena in Narrowly Recessed Gate GaAs FETs." IEEE Transactions on Electron Devices .

Cita MLA (9a ed.)

Mitani, Y. "Analysis of Surface-state and Impact-ionization Effects on Breakdown Characteristics and Gate-lag Phenomena in Narrowly Recessed Gate GaAs FETs." IEEE Transactions on Electron Devices, .