Mitani, Y. Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationMitani, Y. "Analysis of Surface-state and Impact-ionization Effects on Breakdown Characteristics and Gate-lag Phenomena in Narrowly Recessed Gate GaAs FETs." IEEE Transactions on Electron Devices .
MLA (9th ed.) CitationMitani, Y. "Analysis of Surface-state and Impact-ionization Effects on Breakdown Characteristics and Gate-lag Phenomena in Narrowly Recessed Gate GaAs FETs." IEEE Transactions on Electron Devices, .
Warning: These citations may not always be 100% accurate.