A simplified model for the effect of interfinger metal on maximum temperature rise in a multifinger bipolar transistor.
The prediction of a simple lumped representation of heat sharing through emitter interconnect in high-power multiemitter bipolar devices is compared to numerical thermal simulation and found to exhibit nonphysical results. Using numerical simulation, interfinger metal heat flow is characterized qual...
| Xuất bản năm: | IEEE Transactions on computer-aided design of integrated circuits and systems 22, 1 (2003). |
|---|---|
| Tác giả chính: | |
| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Những chủ đề: |