Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches.

Filling high aspect ratio trenches is an essential manufacturing step for state of the art memory cells. Understanding and simulating the transport and surface processes enables one to achieve voidless filling of deep trenches, to predict the resulting profiles, and thus to optimize the process para...

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Bibliografische gegevens
Gepubliceerd in:	IEEE Transactions on computer-aided design of integrated circuits and systems 22, 3 (2003).
Hoofdauteur:	Heitzinger, C.
Formaat:	Artikel
Taal:	English
Onderwerpen:	0.1 micron. 7 micron. As doped polysilicon deposition simulation. As in situ doping. Langmuir-Hinshelwood type time dependent surface coverage. Si:As. Bottom up filling. Deep trenches. High aspect ratio trenches. Manufacturing step. Memory cells. Model. Polysilicon CVD. Process parameters optimization. Profile prediction. Step coverages. Surface coverage dependent As desorption rates. Surface coverage dependent As incorporation rates. Surface coverage dependent sticking coefficients. Surface processes. Surface topography. Transport processes. Voidless filling.