Cita APA

Heitzinger, C. Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Transactions on computer-aided design of integrated circuits and systems.

Citación estilo Chicago

Heitzinger, C. "Simulation of Arsenic in Situ Doping with Polysilicon CVD and Its Application to High Aspect Ratio Trenches." IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems .

Cita MLA

Heitzinger, C. "Simulation of Arsenic in Situ Doping with Polysilicon CVD and Its Application to High Aspect Ratio Trenches." IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems, .