Heitzinger, C. Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Transactions on computer-aided design of integrated circuits and systems.
Citazione stile Chigago Style (17a edizione)Heitzinger, C. "Simulation of Arsenic in Situ Doping with Polysilicon CVD and Its Application to High Aspect Ratio Trenches." IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems .
Citatione MLA (9a ed.)Heitzinger, C. "Simulation of Arsenic in Situ Doping with Polysilicon CVD and Its Application to High Aspect Ratio Trenches." IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems, .
Attenzione: Queste citazioni potrebbero non essere precise al 100%.