Heitzinger, C. Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Transactions on computer-aided design of integrated circuits and systems.
Chicago Style (17th ed.) CitationHeitzinger, C. "Simulation of Arsenic in Situ Doping with Polysilicon CVD and Its Application to High Aspect Ratio Trenches." IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems .
MLA (9th ed.) CitationHeitzinger, C. "Simulation of Arsenic in Situ Doping with Polysilicon CVD and Its Application to High Aspect Ratio Trenches." IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems, .
Warning: These citations may not always be 100% accurate.