French team demonstrates terahertz transistor.

French team demonstrates terahertz transistor.

The creation of a nanotransistor that generates a terahertz signal by means of plasma waves was reported by researchers in France in the 29 March issue of Applied Physics Letters. Such devices could fill a gap between 0.3 and 3 terahertz, for which no compact solid-state sources are available.

Détails bibliographiques
Publié dans:IEEE spectrum 41, 5 (2004).
Auteur principal: Hellemans, A.
Format: Article
Langue:English
Sujets:
0.3 to 3 THz.
Montpellier transistor.
Electron beam lithography.
Nanotransistor.
Nonionizing radiation.
Plasma waves.
Terahertz emission.
Terahertz gap.
Terahertz signal.
Terahertz transistor.