APA (7th ed.) Citation

Kang, S. A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. IEEE Journal of solid state circuits.

Chicago Style (17th ed.) Citation

Kang, S. "A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation." IEEE Journal of Solid State Circuits .

MLA (9th ed.) Citation

Kang, S. "A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation." IEEE Journal of Solid State Circuits, .