Physical random number generator based on MOS structure after soft breakdown.

Physical random number generator based on MOS structure after soft breakdown.

We present a novel physical random number generator (RNG) that uses a metal-oxide semiconductor (MOS) capacitor after soft breakdown (SBD) as a random source. It is known that the electrical properties of MOS capacitors after SBD show large fluctuation. When the resistor in an astable multivibrator...

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Bibliographic Details
Published in:IEEE Journal of solid state circuits 39, 8 (2004).
Main Author: Yasuda, S.
Format: Article
Language:English
Subjects:
1-bit counter.
MOS capacitor.
MOS capacitors.
MOS structure.
SBD.
Astable multivibrator.
Flip-flop.
Metal-oxide semiconductor.
Noise.
Physical random number generator.
Soft breakdown.