Physical random number generator based on MOS structure after soft breakdown.
We present a novel physical random number generator (RNG) that uses a metal-oxide semiconductor (MOS) capacitor after soft breakdown (SBD) as a random source. It is known that the electrical properties of MOS capacitors after SBD show large fluctuation. When the resistor in an astable multivibrator...
| הוצא לאור ב: | IEEE Journal of solid state circuits 39, 8 (2004). |
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| מחבר ראשי: | |
| פורמט: | Article |
| שפה: | English |
| נושאים: |