A 10-b 150-MSample/s 1.8-V 123-mW CMOS A

A 10-b 150-MSample/s 1.8-V 123-mW CMOS A

This work describes a 10-b 150-MSample/s 4-b-per-stage single-channel CMOS pipelined ADC incorporating improved gate-bootstrapping techniques for a wideband SHA and temperature- and supply-insensitive CMOS references. The proposed ADC is designed and fabricated in a 0.18-μm one-poly six-metal CMOS t...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE Journal of solid state circuits 39, 8 (2004).
1. Verfasser: Jong-Bum Park
Format: Artikel
Sprache:English
Schlagworte:
0.18 micron.
1.8 V.
10 bit.
123 mW.
400 MHz.
CMOS A/D converter.
Nyquist frequency.
Analog-to-digital converters.
Differential nonlinearities.
Gate-bootstrapping techniques.
Input bandwidth.
Input frequencies.
Integral nonlinearities.
One-poly six-metal CMOS technology.
Pipelined ADC.
Signal-to-noise-and-distortion ratio.
Single-channel ADC.
Supply-insensitive CMOS references.
Temperature-insensitive CMOS references.
Wideband SHA.