A 16-GHz ultra-high-speed Si-SiGe HBT comparator.

A 16-GHz ultra-high-speed Si-SiGe HBT comparator.

This paper presents an improved master-slave bipolar Si-SiGe HBT comparator design for ultra-high-speed data converter applications. The latch is maintained during the track stage facilitating quick transition back to the latch stage, increasing the sampling speed of the comparator. Implemented in a...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Journal of solid state circuits 38, 9 (2003).
Päätekijä: Jensen, J.C
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
0.5 micron.
16 GHz.
16-GHz ultra-high-speed Si-SiGe HBT comparator.
55 GHz.
80 mW.
BiCMOS Si-SiGe process.
Si-SiGe.
Analog-digital conversion.
Latch stage.
Master-slave bipolar Si-SiGe RBT comparator design.
Sample-and-hold circuits.
Sampling speed.
Track stage.
Ultra-high-speed data converter.