A 16-GHz ultra-high-speed Si-SiGe HBT comparator.

A 16-GHz ultra-high-speed Si-SiGe HBT comparator.

This paper presents an improved master-slave bipolar Si-SiGe HBT comparator design for ultra-high-speed data converter applications. The latch is maintained during the track stage facilitating quick transition back to the latch stage, increasing the sampling speed of the comparator. Implemented in a...

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Podrobná bibliografie
Vydáno v:IEEE Journal of solid state circuits 38, 9 (2003).
Hlavní autor: Jensen, J.C
Médium: Článek
Jazyk:English
Témata:
0.5 micron.
16 GHz.
16-GHz ultra-high-speed Si-SiGe HBT comparator.
55 GHz.
80 mW.
BiCMOS Si-SiGe process.
Si-SiGe.
Analog-digital conversion.
Latch stage.
Master-slave bipolar Si-SiGe RBT comparator design.
Sample-and-hold circuits.
Sampling speed.
Track stage.
Ultra-high-speed data converter.