00000cab a22000003a 4500 UP-99796217609277506 Buklod 20231007234124.0 m |o d | ta 100506s xx d | ||r ||||| || DENGII eng Urteaga, M. G-band (140-220-GHz) InP-based HBT amplifiers. pp. 1451-1456 We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one design demonstrating 12.0-dB gain at 170 GHz and a second design exhibiting 8.5-dB gain at 195 GHz. 12.0 dB. 140 to 220 GHz. 6.3 dB. 8.5 dB. G-band. HBT amplifiers. InP. InP-based technology. Parasitic collector-base junction capacitance. Scaling. Single-stage amplifier. Small-signal gain. Transferred-substrate technology. Tuned amplifiers. IEEE Journal of solid state circuits 38, 9 (2003). FO UPD DENG-II Article