G-band (140-220-GHz) InP-based HBT amplifiers.
We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibit...
| الحاوية / القاعدة: | IEEE Journal of solid state circuits 38, 9 (2003). |
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| المؤلف الرئيسي: | |
| التنسيق: | مقال |
| اللغة: | English |
| الموضوعات: |