00000cab a22000003a 4500 UP-99796217609277504 Buklod 20231007234124.0 m |o d | ta 100506s xx d | ||r ||||| || DENGII eng Raghavan, A. Direct extraction of an empirical temperature-dependent InGaP GaAs HBT large-signal model. pp. 1443-1450 A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accompanied by a simple extraction process, which requires only dc current-voltage (I-V) and multibias-point small-signal S-parameter measurements. All the current-source model parameters, including the self-heating parameters, are directly extracted from measured forward I-V data at different ambient temperatures. The distributed base-collector capacitance and base resistance are extracted from measured S-parameters using a new technique. The extraction procedure is fast, accurate, and inherently minimizes the average squared-error between measured and modeled data, thereby eliminating the need for further optimization following parameter extraction. This modeling methodology is successfully applied to predict the dc, small-signal S-parameter, and output fundamental and harmonic power characteristics of an InGaP/GaAs HBT, over a wide range of temperatures. HBT. InGaP-GaAs. InGaP/GaAs. Ambient-temperature variation. Average squared-error. De current-voltage measurements. Distributed base-collector capacitance. Empirical temperature-dependent model. Extraction process. Forward I-V data. Harmonic power characteristics. Large-signal model. Multibias-point small-signal S-parameter measurements. Self-heating effects. IEEE Journal of solid state circuits 38, 9 (2003). FO UPD DENG-II Article