Latchup-free ESD protection design with complementary substrate-triggered SCR devices.

Latchup-free ESD protection design with complementary substrate-triggered SCR devices.

The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) prote...

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Detalhes bibliográficos
Publicado no:IEEE Journal of solid state circuits 38, 8 (2003).
Autor principal: Ming-Dou Ker
Formato: Artigo
Idioma:English
Assuntos:
0.25 micron.
500 V.
7.25 kV.
CMOS process compatibility.
ESD stresses.
Adjustable holding voltage.
Complementary circuit style.
Complementary substrate-triggered SCR devices.
Controllable switching voltage.
Current triggering event.
Electrostatic discharge protection circuits.
Latchup-free ESD protection design.
Salicided CMOS process.
Silicon-controlled rectifier.
Turn-on mechanism.
Turn-on speed.