Latchup-free ESD protection design with complementary substrate-triggered SCR devices.

The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) prote...

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প্রকাশিত:	IEEE Journal of solid state circuits 38, 8 (2003).
প্রধান লেখক:	Ming-Dou Ker
বিন্যাস:	প্রবন্ধ
ভাষা:	English
বিষয়গুলি:	0.25 micron. 500 V. 7.25 kV. CMOS process compatibility. ESD stresses. Adjustable holding voltage. Complementary circuit style. Complementary substrate-triggered SCR devices. Controllable switching voltage. Current triggering event. Electrostatic discharge protection circuits. Latchup-free ESD protection design. Salicided CMOS process. Silicon-controlled rectifier. Turn-on mechanism. Turn-on speed.