MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS.

The influence of the gate doping type of the MOS varactor on frequency tuning, phase noise, and frequency sensitivity to supply-voltage variations of a fully integrated inductance-capacitance voltage-controlled oscillator (LC-VCO) is presented. Three varactors in multifinger layout with shallow tren...

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Detalles Bibliográficos
Publicado en:	IEEE Journal of solid state circuits 38, 7 (2003).
Autor Principal:	Maget, J.
Formato:	Artigo
Idioma:	English
Subjects:	1 mA. 1.5 V. 4 GHz. LC-VCO. MOS varactor. Si. Capacitance. Digital CMOS. Figure of merit. Frequency sensitivity. Frequency tuning. Fully-integrated inductance-capacitance voltage-controlled oscillator. Homogenous doping. Mixed doping. Multifinger layout. n-type gate. p-type gate. Phase noise. Polysilicon gate. Quality factor. Shallow trench isolation.