MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS.

MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS.

The influence of the gate doping type of the MOS varactor on frequency tuning, phase noise, and frequency sensitivity to supply-voltage variations of a fully integrated inductance-capacitance voltage-controlled oscillator (LC-VCO) is presented. Three varactors in multifinger layout with shallow tren...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE Journal of solid state circuits 38, 7 (2003).
1. Verfasser: Maget, J.
Format: Artikel
Sprache:English
Schlagworte:
1 mA.
1.5 V.
4 GHz.
LC-VCO.
MOS varactor.
Si.
Capacitance.
Digital CMOS.
Figure of merit.
Frequency sensitivity.
Frequency tuning.
Fully-integrated inductance-capacitance voltage-controlled oscillator.
Homogenous doping.
Mixed doping.
Multifinger layout.
n-type gate.
p-type gate.
Phase noise.
Polysilicon gate.
Quality factor.
Shallow trench isolation.