Mobility enhancement of a high electron mobility transistor by external strain
The effect of external strain in the carrier mobility of High Electron Mobility Transistor is investigated. The layer is grown by Molecular Beam Epitaxy at elevated temperatures. High resolution x-ray diffraction of the grown layer revealed that the indium diffused into the Gallium Arsenide substr...
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| Natura: | Tesi |
| Lingua: | English |
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