Resonant cavity-enhanced devices on Au/Si substrate
Two InxGa1-xAs/GaAs based resonant cavity-enhanced (RCE) devices employing external mirrors were grown by Molecular Beam Epitaxy. One is a conventional p-i-n structure and the other layer is integrated with 24-period top distributed Bragg reflectors (DBR). Epitaxial lift-off (ELO) and wafer-bondin...
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| Định dạng: | Luận văn |
| Ngôn ngữ: | English |
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