Resonant cavity-enhanced devices on Au/Si substrate
Two InxGa1-xAs/GaAs based resonant cavity-enhanced (RCE) devices employing external mirrors were grown by Molecular Beam Epitaxy. One is a conventional p-i-n structure and the other layer is integrated with 24-period top distributed Bragg reflectors (DBR). Epitaxial lift-off (ELO) and wafer-bondin...
| Prif Awdur: | |
|---|---|
| Fformat: | Traethawd Ymchwil |
| Iaith: | English |
| Pynciau: |